μ PA2791GR
25
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
FORWARD TRANSFER CHARACTERISTICS
20
15
10
5
V GS = 10 V
4.5 V
10
1
0.1
0.01
0.001
V DS = 10 V
Pulsed
T A = 150 ° C
75 ° C
25 ° C
? 25 ° C
Pulsed
0
0.0001
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
2.5
2
V DS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
10
1
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.5
0.1
1
0.5
0
V DS = 10 V
I D = 1 mA
0.01
0.001
? 25 ° C
25 ° C
75 ° C
T A = 150 ° C
V DS = 10 V
Pulsed
-50
0
50
100
150
100 μ
1m
10 m
100 m
1
10
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
Pulsed
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
I D = 3.0 A
80
80
Pulsed
60
40
20
0
V GS = 4.5 V
10 V
60
40
20
0
1
10
100
0
5
10
15
20
6
I D - Drain Current - A
Data Sheet G18207EJ2V0DS
V GS - Gate to Source Voltage - V
相关PDF资料
UPA602T-T1-A MOSFET N-CH DUAL 50V SC-59
UPA603T-T2-A MOSFET P-CH DUAL 50V SC-59
UPA606T-T2-A MOSFET N-CH DUAL 50V SC-59
UPA607T-T1-A MOSFET P-CH DUAL 50V SC-59
UPA610TA-T2-A MOSFET P-CH DUAL 30V SC-59
UPA611TA-T2-A MOSFET N-CH DUAL 30V SC74-6
UPA621TT-E2-A MOSFET N-CH 20V 6-WSOF
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